Method for manufacturing single crystal of nitride
AssigneesNGK Insulators, Ltd., Osaka University
InventorsMikiya Ichimura, Katsuhiro Imai, Chikashi Ihara, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
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Abstract
A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.
Claims7
A method for producing a nitride single crystal on a seed crystal in a melt comprising a flux and a material of the single crystal in a growth vessel,
- wherein the melt directly contacts an atmosphere comprising at least nitrogen at a gas-liquid interface and the nitrogen for growth of the nitride single crystal is supplied from the atmosphere into the melt through the gas-liquid interface,
- wherein a difference (TS-TB) of a temperature (TS) at the gas-liquid interface of the melt and a temperature (TB) at the lowermost part of the melt is set to 1° C. or larger and 8° C. or smaller, and
- wherein the temperature (TS) at the gas-liquid interface of the melt is higher than the temperature (TB) at the lowermost part of the melt.
Dependencies are inferred from the claim text.