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US 8,013,447 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorYoung Seok Kim
Life of this patent
Estimating the term…
Abstract
The semiconductor device includes an upper electrode line structure and a lower electrode line structure provided over a semiconductor substrate. The semiconductor device also includes a guard contact having a first portion and a second portion. The guard contact is disposed between the upper electrode line structure and the lower electrode line structure. The first and second portions of the guard contact have different line widths.
Claims7
A semiconductor device, comprising:
- an upper electrode line structure having a constant width and a lower electrode line structure having a constant width provided over a semiconductor substrate, wherein the width of the upper electrode line structure is greater than the width of the lower electrode line structure;
- and
- a guard contact having a plurality of first portions and a plurality of second portions that are alternately disposed in a single layer that is disposed between and in direct contact with the upper electrode line structure and the lower electrode line structure, the first and second portions of the guard contact having different line widths, wherein centerlines of the first portion and the second portion of the guard contact are disposed on a common straight line.
A method for fabricating a semiconductor device, the method comprising:
- forming a lower electrode line structure having a constant width over a semiconductor substrate having a lower structure;
- forming a guard line having a plurality of first portions and a plurality of second portions that are alternatively disposed in a single layer over and in direct contact with the lower electrode line structure, wherein a line width of the first portions and a line width of the second portions are different, centerlines of the first portion and the second portion of the guard contact being disposed on a common straight line;
- and
- forming an upper electrode line structure having a constant width over the guard contact, wherein the width of the upper electrode line structure is greater than the width of the lower electrode line structure.
1 more element
Dependencies are inferred from the claim text.