Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMasayuki Furumiya, Yasutaka Nakashiba
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Abstract
A semiconductor device of the present invention has a first contact and a second contact which are located over a device isolation film so as to be opposed with each other, and have a length in the horizontal direction larger than the height; a first electro-conductive pattern located on the first contact and is formed in at least a single interconnect layer; a second electro-conductive pattern located on the second contact so as to be opposed with the first electro-conductive pattern; and an interconnect formed in an upper interconnect layer which is located above the first electro-conductive pattern and the second electro-conductive pattern, so as to be located in a region above the first electro-conductive pattern and the second electro-conductive pattern.
Claims7
A semiconductor device comprising:
- a device isolation film formed in a substrate;
- a first contact and a second contact located over said device isolation film so as to be opposed with each other, each of which including a length in the horizontal direction larger than the height;
- a first electro-conductive pattern located on said first contact, and formed in at least a single interconnect layer;
- a second electro-conductive pattern located on said second contact so as to be opposed with said first electro-conductive pattern, and formed in at least a single interconnect layer;
- and
- an upper interconnect layer located above said first electro-conductive pattern and said second electro-conductive pattern,
- wherein, said upper interconnect layer is provided so as to locate a portion of said upper interconnect layer composed of an insulating film or a portion of said upper interconnect layer composed of a third electro-conductive pattern, which is different from said first electro-conductive pattern and said second electro-conductive pattern, above said first electro-conductive pattern and said second electro-conductive pattern.
Dependencies are inferred from the claim text.