Semiconductor devices and structures thereof

A semiconductor device, comprising:

• a plurality of conductive lines formed over a workpiece, the workpiece having a first region and a second region, the plurality of conductive lines having a top region;
• a first insulating material comprising two components wherein one component is thermally labile, the first insulating material disposed between the plurality of conductive lines and proximate the top region, the first insulating material being impermeable in the first region and permeable in the second region;
• a second insulating material in the first region, the second insulating material comprising polynorbornene disposed beneath the first insulating material, wherein a decombustion temperature of the thermally labile component is lower than a decombustion temperature of the second insulating material;
• and
• air gaps disposed beneath the first insulating material between the plurality of first conductive lines in the second region.

A semiconductor device, comprising:

• a plurality of conductive lines formed over a workpiece, the workpiece having a first region and a second region, the plurality of first conductive lines having a top region;
• a first insulating material comprising siloxane-organic co-polymere with about 10-20% Si content, the first insulating material being impermeable in the first region and permeable in the second region;
• a second insulating material in the first region, the second insulating material comprising polynorbornene disposed beneath the first insulating material;
• and
• air gaps disposed beneath the first insulating material between the plurality of first conductive lines in the second region.