Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal

A manufacturing method for silicon carbide single crystal, comprising the steps of:

• fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon;
• vaporizing said raw material;
• generating a mixed gas that includes carbon, silicon, boron and nitrogen;
• and
• growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing said mixed gas on the surface of said seed crystal substrate to produce a silicon carbide single crystal which comprises a first dopant consisting of boron functioning as an acceptor, and a second dopant consisting of nitrogen functioning as a donor, wherein the silicon carbide single crystal contains only boron and nitrogen as dopants, the content of said first dopant and said second dopant is not less than 1×1016 atoms/cm3, the content of said first dopant is greater than the content of said second dopant, the content of said first dopant is not less than 1×1016 atoms/cm3 and no greater than 1×1017 atoms/cm3, and the difference in content between said first dopant and said second dopant is not greater than 5×1016 atoms/cm3.