Method for forming contact holes in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsSang-Oh Lee, Sung-Kwon Lee, Jun-Hyeub Sun, Jong-Sik Bang
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Abstract
A method for forming contact holes in a semiconductor device includes forming a hard mask layer over an etch target layer, forming a first line pattern in the hard mask layer by etching a portion of the hard mask layer through a primary etch process, forming a second line pattern crossing the first line pattern by etching the hard mask layer including the first line pattern through a secondary etch process, and etching the etch target layer by using the hard mask layer including the first line pattern and the second line pattern as an etch barrier.
Claims19
A method for forming contact holes in a semiconductor device, comprising:
- forming a hard mask layer over an etch target layer;
- forming a first line pattern in the hard mask layer by etching a portion of the hard mask layer through a primary etch process;
- forming a second line pattern crossing the first line pattern by etching the hard mask layer including the first line pattern through a secondary etch process;
- and
- etching the etch target layer by using the hard mask layer including the first line pattern and the second line pattern as an etch barrier.
A method for forming a semiconductor device, comprising:
- forming a hard mask layer over an etch target layer;
- forming a first line pattern in the hard mask layer by etching a portion of the hard mask layer through a primary etch process;
- forming a planarization layer over the hard mask layer including the first line pattern;
- forming a pattern by selectively etching the planarization layer;
- forming a second line pattern crossing the first line pattern by using the first line pattern and the pattern as etch barriers and etching the hard mask layer including the first line pattern through a secondary etch process;
- removing the pattern;
- and
- etching the etch target layer by using the hard mask layer including the first line pattern and the second line pattern as an etch barrier.
Dependencies are inferred from the claim text.