Atomic layer volatilization process for metal layers
AssigneeIntel Corporation
InventorsAdrien R. Lavoie, Harsono S. Simka
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Abstract
A two-stage method to remove a metal layer from a substrate surface comprises using a CMP process to remove a first portion of the metal layer from the substrate surface, and using an ALV process to remove a second portion of the copper layer from the substrate surface. The ALV process comprises pulsing a co-reactant into a reactor housing the substrate, wherein the co-reactant reacts with the metal layer to form a volatile metal-containing product, and then evacuating the reactor to volatize and remove the metal-containing product.
Claims11
A two-stage method to remove a metal layer from a substrate surface comprising:
- using a CMP process to remove a first portion of the metal layer from the substrate surface;
- and
- using an ALV process to remove a second portion of the metal layer from the substrate surface, wherein the ALV process comprises:
- pulsing a co-reactant into a reactor housing the substrate, wherein the co-reactant reacts with the metal layer to form a volatile metal-containing product, and
- evacuating the reactor to volatize and remove the metal-containing product.
Dependencies are inferred from the claim text.