Method for manufacturing semiconductor device using plasma doping
AssigneePanasonic Corporation
InventorsKatsumi Okashita, Yuichiro Sasaki, Keiichi Nakamoto, Bunji Mizuno
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Abstract
A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to thereby turn the ignition gas into a plasma, and then a process gas containing an impurity is introduced into the chamber to thereby turn the process gas into a plasma. Then, a bias voltage is applied to the substrate so as to dope the semiconductor region with the impurity after confirming attenuation of an amount of the ignition gas remaining in the chamber.
Claims12
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a semiconductor region having an upper surface and a side surface on a substrate;
- (b) introducing an ignition gas into a chamber to thereby turn the ignition gas into a plasma after the substrate is placed in the chamber, after the step (a);
- (c) introducing a process gas containing an impurity into the chamber to thereby turn the process gas into a plasma, after the step (b);
- and
- (d) applying a bias voltage to the substrate so as to dope the semiconductor region with the impurity after confirming attenuation of an amount of the ignition gas remaining in the chamber, after the step (c).
Dependencies are inferred from the claim text.