Methods of forming features in integrated circuits
AssigneeInternational Business Machines Corporation
InventorsKuan-Neng Chen, John Christopher Arnold, Niranjana Ruiz
Life of this patent
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Abstract
A feature is formed in an integrated circuit by providing one or more layers to be patterned, providing a first layer overlying the one or more layers to be patterned, and providing a second layer overlying the first layer. The second layer is patterned to form a raised feature with one or more sidewalls. Subsequently, the first layer is processed such that components of the first layer deposit on the one or more sidewalls of the raised feature to form a mask. The mask is used to pattern the one or more layers to be patterned.
Claims18
A method of forming a feature in an integrated circuit, the method comprising the steps of:
- providing one or more layers to be patterned;
- providing a first layer overlying the one or more layers to be patterned;
- providing a second layer overlying the first layer;
- patterning the second layer to form a raised feature with one or more sidewalls;
- processing the first layer such that components of the first layer deposit on the one or more sidewalls of the raised feature to form a mask;
- and
- utilizing the mask to pattern the one or more layers to be patterned.
An integrated circuit, the integrated circuit formed by a method comprising the steps of:
- providing one or more layers to be patterned;
- providing a first layer overlying the one or more layers to be patterned;
- providing a second layer overlying the first layer;
- patterning the second layer to form a raised feature with one or more sidewalls;
- processing the first layer such that components of the first layer deposit on the one or more sidewalls of the raised feature to form a mask;
- and
- utilizing the mask to pattern the one or more layers to be patterned.
An apparatus comprising an integrated circuit, the integrated circuit formed using a method comprising the steps of:
- providing one or more layers to be patterned;
- providing a first layer overlying the one or more layers to be patterned;
- providing a second layer overlying the first layer;
- patterning the second layer to form a raised feature with one or more sidewalls;
- processing the first layer such that components of the first layer deposit on the one or more sidewalls of the raised feature to form a mask;
- and
- utilizing the mask to pattern the one or more layers to be patterned.
Dependencies are inferred from the claim text.