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US 8,012,806 B2Granted
Multi-directional trenching of a die in manufacturing superjunction devices
AssigneeIcemos Technology Ltd.
InventorsTakeshi Ishiguro, Kenji Sugiura, Hugh J. Griffin
Life of this patent
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Abstract
A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.
Claims15
A method of manufacturing a superjunction device, the method comprising:
- (a) providing a semiconductor wafer, the semiconductor wafer including at least one die;
- (b) forming at least one first trench in the at least one die, the at least one first trench having a first orientation and defining a first area;
- and
- (c) forming at least one second trench in the at least one die, the at least one second trench having a second orientation that is different from the first orientation, the at least one second trench defining a second area such that a ratio of the first area to the second area is about one-to-one.
1 more element
A method of manufacturing a superjunction device, the method comprising:
- (a) providing a semiconductor wafer, the semiconductor wafer including at least one die;
- (b) forming a first plurality of trenches in the at least one die, each of the first plurality of trenches having a first orientation, the first plurality of trenches defining a first area;
- and
- (c) forming a second plurality of trenches in the at least one die, each of the second plurality of trenches having a second orientation that is different from the first orientation, the second plurality of trenches defining a second area such that a ratio of the first area to the second area is about one-to-one.
1 more element
Dependencies are inferred from the claim text.