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US 8,012,670 B2Granted
Photoresist systems
AssigneeRohm and Haas Electronic Materials LLC
InventorsGary N. Taylor, Cheng-Bai Xu
Life of this patent
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Abstract
New photoresist systems are provided that comprise an underlying processing (or barrier) layer composition and an overcoated photoresist layer. Systems of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.
Claims18
A microelectronic device substrate comprising a silicon oxynitride layer;
- a crosslinked organic processing composition layer over the silicon oxynitride layer, the processing layer comprising
- a photoresist composition layer over the processing layer composition,
- wherein the photoresist comprises one or more polymers that are chosen from among (i) a polymer substantially free of any aromatic groups and (ii) a fluorinated polymer, and
- the processing composition layer comprises a resin that comprises one or more optionally substituted azole groups, one or more optionally substituted tetrazole groups, one or more optionally substituted triazole groups, one or more optionally substituted imidazole groups, or one or more optionally substituted benzotriazole groups.
1 more element
A method for forming a photoresist relief image comprising:
- applying a processing composition coating layer on a silicon oxynitride layer, the processing layer comprising one or more optionally substituted azole groups, one or more optionally substituted tetrazole groups, one or more optionally substituted triazole groups, one or more optionally substituted imidazole groups, or one or more optionally substituted benzotriazole groups;
- crosslinking the processing layer;
- crosslinking the processing composition coating layer;
- and thereafter applying over the crosslinked processing composition coating layer a coating layer of a photoresist composition;
- exposing the applied photoresist layer to activating patterned radiation having a wavelength of less than 200 nm and developing the exposed photoresist layer to provide a photoresist relief image.
2 more elements
Dependencies are inferred from the claim text.