Semiconductor device
AssigneeRohm Co., Ltd.
InventorSatoshi Kageyama
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a first wire made of a material mainly composed of Cu, two second wires made of a material mainly composed of Cu, an interlayer dielectric film formed between the first wire and the two second wires, two vias made of a material mainly composed of Cu and each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires, and a dummy via formed between the two second wires. The dummy via is made of a material mainly composed of Cu, has a diameter smaller than a diameter of each of the two vias, and is connected to the first wire while not contributing to electrical connection between the first wire and the two second wires.
Claims7
A semiconductor device comprising:
- a first wire made of a material mainly composed of Cu;
- two second wires made of a material mainly composed of Cu;
- an interlayer dielectric film formed between the first wire and the two second wires;
- two vias, made of a material mainly composed of Cu, each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires;
- and
- a dummy via formed between the two second wires, the dummy via being made of a material mainly composed of Cu, having a diameter smaller than a diameter of each of the two vias, and being connected to the first wire while not contributing to electrical connection between the first wire and the two second wires.
A semiconductor device comprising:
- a first wire made of a material mainly composed of Cu;
- two second wires made of a material mainly composed of Cu;
- an interlayer dielectric film formed between the first wire and the two second wires;
- a plurality of vias, made of a material mainly composed of Cu, each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires;
- and
- a plurality of dummy vias formed between the two second wires, each being made of a material mainly composed of Cu, having a diameter smaller than a diameter of each of the two vias, and being connected to the first wire while not contributing to electrical connection between the first wire and the two second wires, each of the plurality of dummy vias corresponding to one of the plurality of vias.
A semiconductor device comprising:
- a first wire made of a material mainly composed of Cu;
- two second wires made of a material mainly composed of Cu;
- an interlayer dielectric film formed between the first wire and the two second wires;
- two vias, made of a material mainly composed of Cu, each penetrating through the interlayer dielectric film and connecting the first wire and a respective one of the two second wires;
- and
- a dummy via formed between the two second wires, the dummy via being made of a material mainly composed of Cu, and being connected to the first wire while not contributing to electrical connection between the first wire and the two second wires, wherein
- the first wire is disposed under the interlayer dielectric film, and
- a lower end of the dummy via is connected to an upper surface of the first wire.
Dependencies are inferred from the claim text.