Method for manufacturing semiconductor device and the semiconductor device
AssigneeRenesas Electronics Corporation
InventorKen Ozawa
Life of this patent
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Abstract
An etching stopper film is formed on top of a first insulating film. The etching stopper film is a film formed by depositing at least two films, made of constituent materials identical in quality to each other, one another. Subsequently, a first opening pattern is formed in the etching stopper film. Subsequently, a second insulating film is formed on top of the etching stopper film. Subsequently, a mask pattern is formed on top of the second insulating film. Subsequently, the second insulating film is etched with the use of the mask pattern as a mask to be followed by etching of the first insulating film with the use of the etching stopper film as a mask.
Claims8
A semiconductor device, comprising:
- a first electrically conductive pattern;
- a first interlayer dielectric positioned over the first electrically conductive pattern;
- an etching stopper film comprising at least two films each comprising nitrogen and constituent materials identical in quality to each other, respectively, deposited on one another, and positioned on top of the first interlayer dielectric;
- a second interlayer dielectric positioned over the etching stopper film;
- an interconnect groove formed in the second interlayer dielectric, and positioned above the first electrically conductive pattern, a portion of the etching stopper film being exposed to a bottom of the interconnect groove;
- a connection hole formed in the first interlayer dielectric and the etching stopper film to connect an underside of the interconnect groove to the first electrically conductive pattern;
- and
- a second electrically conductive pattern embedded in the connection hole and the interconnect groove.
Dependencies are inferred from the claim text.