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US 8,008,728 B2Granted
Semiconductor device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorMasakazu Goto
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Abstract
In one aspect of the present invention, a semiconductor device may include a semiconductor substrate; an element isolation region provided in the semiconductor substrate and having an oxide layer and an oxidant-diffusion prevention layer provided on the oxide layer; a gate dielectric film provided on the semiconductor substrate and the oxidant-diffusion prevention layer; and a gate electrode provided on the gate dielectric film.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an element isolation region provided in the semiconductor substrate and having an oxide layer and an oxidant-diffusion prevention layer provided on the oxide layer, the element isolation region being insulating material;
- a gate dielectric film provided on the semiconductor substrate and the oxidant-diffusion prevention layer;
- and
- a gate electrode provided on the gate dielectric film.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an element isolation region provided in the semiconductor substrate, the element isolation region being insulating material;
- means for preventing an oxidant in the element isolation region from diffusing;
- a gate dielectric film provided on the semiconductor substrate;
- and
- a gate electrode provided on the gate dielectric film.
3 more elements
Dependencies are inferred from the claim text.