Light-emitting device and method for fabricating the same
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsYukari Suzuki, Jun Ikeda
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Abstract
A transparent conductive semiconductor substrate 70 comprising a light emitting layer section 24 is directly bonded on one of main surfaces on a main compound semiconductor layer 50 composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer 50 and the transparent conductive semiconductor substrate 70 is adjusted to be equal to or greater than 1×1014 atoms/cm2 and equal to or less than 2×1015 atoms/cm2. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.
Claims2
A light emitting device, comprising a configuration having a transparent conductive semiconductor substrate directly bonded on one of main surfaces on a main compound semiconductor layer composed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layer and the transparent conductive semiconductor substrate is adjusted to be equal to or greater than 1×1014 atoms/cm2 and equal to or less than 2×1015 atoms/cm2;
- and
- wherein the alkali metal atoms are either ones of potassium atoms and sodium atoms.
Dependencies are inferred from the claim text.