Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorMasanori Uchida
Life of this patent
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Abstract
The semiconductor manufacturing method comprises the step of forming a metal alloy film of an alloy of a metal of Ni or others and a noble metal over a semiconductor substrate containing a region where silicon is partially exposed; the step of selectively reacting the silicon in the region and the metal alloy film by thermal processing to form metal silicide film containing the metal of Ni or others and the noble metal on the region; and the step of removing the metal alloy film remaining unreacted by using a solution containing hydrogen peroxide with a transition metal, which has higher ionization tendency than the metal of Ni or others, dissolved in.
Claims18
A method of manufacturing a semiconductor device comprising:
- forming a metal alloy film of a metal and a noble metal over a semiconductor substrate having a region where silicon is partially exposed;
- selectively reacting by thermal processing the silicon in the region with the metal alloy film to form a metal silicide film containing the metal and the noble metal on the region;
- and
- removing the metal alloy film remaining unreacted by using a solution, which is a mixture liquid of sulfuric acid and hydrogen peroxide, a mixture liquid of ammonia and hydrogen peroxide, or a mixture liquid of hydrochloric acid and hydrogen peroxide, with a transition metal, which has higher ionization tendency than the metal, dissolved in the solution, wherein
- the transition metal forms in the solution a metal hydrate complex thereof,
- in removing the metal alloy film, the noble metal in the metal alloy film is removed by coordinating the noble metal by the metal hydrate complex.
A method of manufacturing a semiconductor device comprising:
- forming a metal alloy film of a metal and a noble metal over a semiconductor substrate having a region where silicon is partially exposed;
- selectively reacting by thermal processing the silicon in the region with the metal alloy film to form a metal silicide film containing the metal and the noble metal on the region;
- and
- removing the metal alloy film remaining unreacted by using a solution, which is a mixture liquid of sulfuric acid and hydrogen peroxide, with a transition metal, which has higher ionization tendency than the metal, dissolved in the solution, wherein
- the transition metal forms in the solution a metal hydrate complex thereof,
- in removing the metal alloy film, the noble metal in the metal alloy film is removed by coordinating the noble metal by the metal hydrate complex.
Dependencies are inferred from the claim text.