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US 8,008,171 B2Granted
Method of fabricating polycrystalline semiconductor
AssigneesTatung Co., Ltd., Tatung University
InventorsChiung-Wei Lin, Yi-Liang Chen
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Abstract
Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the amorphous silicon layer or the substrate, and applying RTA (Rapid Thermal Annealing) for light illuminating process, then the light converted into heat by the metal plate will further be conducted to the amorphous silicon layer to realize rapid thermal crystallization. Thus the poly-Si layer of the present invention is obtained.
Claims10
A method of providing a polysilicon layer, which comprises sequentially:
- (A) providing a substrate;
- (B) forming an amorphous silicon layer on a surface of the substrate;
- (C) providing at least one metal plate separate from said substrate;
- (D) attaching said separate at least one metal plate on top of the amorphous silicon layer or on top of the substrate, thus forming a stack, said at least one metal plate covering at least one surface of said stack;
- (E) light-illuminating to the stack while the metal plate covers said surface, thus converting the amorphous silicon layer to the polysilicon layer;
- and
- (F) thereafter mechanically removing the metal plate;
- wherein, a Rapid Thermal Annealing (RTA) process is applied in the light-illuminating process of the step (E) in said removal of the plate.
5 more elements
Dependencies are inferred from the claim text.