Wafer bonding method and wafer structure
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Joon Park
Life of this patent
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Abstract
A wafer bonding method includes providing a primary wafer and a plurality of secondary wafers, wherein the primary wafer is larger than the secondary wafers. An intermediate material layer is formed on at least one of a bonding surface of the primary wafer and bonding surfaces of the secondary wafers. The intermediate material layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the primary wafer and the thermal expansion coefficient of the secondary wafers. The secondary wafers are bonded onto the primary wafer.
Claims11
A wafer bonding method comprising:
- providing an electrically conductive wafer, and a plurality of electrically insulating wafers, each wafer having a bonding surface, the bonding surface of the conductive wafer having an area greater than the area of the bonding surface of each insulating wafer;
- forming an intermediate material layer on at least one of the bonding surface of the conductive wafer and the bonding surfaces of the insulating wafers, the intermediate material layer having a thermal expansion coefficient greater than the thermal expansion coefficient of the conductive wafer and the thermal expansion coefficient of the insulating wafers;
- and
- bonding the bonding surfaces of the insulating wafers onto the bonding surface of the conductive wafer.
A wafer bonding method comprising:
- providing a silicon wafer, and a plurality of sapphire wafers, each wafer having a bonding surface, the bonding surface of the silicon wafer having an area greater than the area of the bonding surface of each sapphire wafer;
- forming an intermediate material layer on at least one of the bonding surface of the silicon wafer and the bonding surfaces of the sapphire wafers, the intermediate material layer having a thermal expansion coefficient greater than the thermal expansion coefficient of the silicon wafer and the thermal expansion coefficient of the sapphire wafers;
- and
- bonding the bonding surfaces of the sapphire wafers onto the bonding surface of the silicon wafer.
A wafer bonding method comprising:
- providing an electrically conductive wafer and a plurality of electrically insulating wafers, each wafer having a bonding surface, the bonding surface of the conductive wafer having an area greater than the area of the bonding surface of each insulating wafer;
- forming a metal layer or an organic layer on at least one of the bonding surface of the conductive wafer and the bonding surfaces of the insulating wafers as an intermediate material layer;
- laying the insulating wafers over the conductive wafer so that the bonding surfaces of the insulating wafers face the bonding surface of the conductive wafer;
- and
- bonding the insulating wafers onto the conductive wafer by performing thermal treatment on the conductive wafer and the insulating wafers.
Dependencies are inferred from the claim text.