US 8,008,161 B2Granted

Capacitor assemblies

AssigneeInfineon Technologies AG

InventorsJens Bachmann, Bernd Föste, Klaus Goller, Jakob Kriz

Life of this patent

Estimating the term…

Loading patent…

Abstract

A method for fabricating a capacitor arrangement which includes at least three electrodes is described. The capacitor arrangement is fabricated using a number of lithography methods that is smaller than the number of electrodes. A capacitor arrangement extending over more than two or more interlayers between metallization layers has a high capacitance per unit area and can be fabricated in a simple way is also described. The circuit arrangement has a high capacitance per unit area and can be fabricated in a simple way. An electrode layer is first patterned using a dry-etching process and residues of the electrode layer are removed using a wet-chemical process, making it possible to fabricate capacitors with excellent electrical properties.

Claims20

Dependent claims

A method for fabricating an integrated capacitor arrangement, the method comprising:

producing a layer stack including, in order, a base electrode layer, a base dielectric layer, at least one center electrode layer, a covering dielectric layer, and a covering electrode layer;
producing a first photoresist layer on the layer stack;
patterning the covering electrode layer and the center electrode layer using a first lithography;
and
producing a second photoresist layer on the base dielectric layer;
patterning simultaneously the patterned covering electrode layer and the base electrode layer using a second lithography with the second photoresist layer on the base dielectric layer, wherein the center electrode layer is not patterned during the simultaneous patterning of the covering electrode layer and the base electrode layer using the second lithography.

3 more elements

Dependencies are inferred from the claim text.