Semiconductor devices and methods of manufacturing thereof

A method of patterning a material layer of a semiconductor device, the method including:

• depositing a polysilicon layer over a workpiece, the workpiece comprising a first region and a second region;
• depositing a first layer of photosensitive material over the polysilicon layer;
• patterning the first layer of photosensitive material with a pattern comprising at least one first feature in the first region and at least one second feature in the second region;
• using the first layer of photosensitive material as a mask to pattern the polysilicon layer thereby forming the at least one first feature in the first region and the at least one second feature in the second region, the at least one second feature comprising a greater lateral dimension than the at least one first feature;
• removing the first layer of photosensitive material;
• after removing the first layer of photosensitive material, depositing a second layer of photosensitive material over the at least one first feature, the at least one second feature, and exposed portions of the workpiece;
• removing the second layer of photosensitive material from over the second region;
• and
• reducing the lateral dimension of the at least one second feature in the second region.

A method of forming a plurality of gates of a semiconductor device, the method comprising:

• providing a workpiece, the workpiece comprising a first region and a second region;
• forming a gate dielectric material over the workpiece;
• forming a gate material over the gate dielectric material;
• depositing a first masking material over the gate material;
• providing a first lithography mask, the first lithography mask comprising a first pattern in the first region of the workpiece and a second pattern in the second region of the workpiece, the second pattern comprising at least one second feature comprising the same dimension as a plurality of first features of the first pattern;
• patterning the first masking material using the first lithography mask;
• using the first masking material as a mask to pattern at least the gate material, each first feature of the first lithography mask forming a first gate in the first region and each second feature of the first lithography mask forming a second gate in the second region, wherein an at least one second gate comprises a different dimension than a dimension of the first gate;
• after patterning at least the gate material, depositing a second masking material over the gate material;
• providing a second lithography mask, the second lithography mask being adapted to expose the second region, but not the first region of the workpiece;
• patterning the second masking material using the second lithography mask, removing the second masking material over the second region and leaving the second masking material over the first region;
• and
• removing a portion of the gate material from the at least one second gate in the second region.