Multiple technology node mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng Lung Lin, Kuan Liang Wu, Fei-Gwo Tsai, Che-Rong Liang
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Abstract
A method of fabricating a mask set is provided. The method includes providing mask data associated with a plurality of mask layers. The mask data includes a first pattern associated with a first technology node and a second pattern associated with a second technology node. The method continues with determining to form a multi-technology node mask (MTM) for a first mask layer of the plurality of mask layers. The MTM for the first mask layer is formed, which includes features associated with the first pattern and features associated with the second pattern.
Claims20
A method of providing a mask set, the method comprising:
- providing mask data, wherein the mask data is associated with a plurality of mask layers, wherein the mask data includes a first pattern and a second pattern, wherein the first pattern is associated with a first technology node, and wherein the second pattern is associated with a second technology node;
- determining to form a multi-technology node mask (MTM) for a first mask layer of the plurality of mask layers;
- and
- forming the MTM for the first mask layer, wherein the MTM includes features associated with the first pattern and features associated with the second pattern.
A method of designing a semiconductor device, the method comprising:
- generating a first pattern and a second pattern, wherein the first pattern is associated with a first technology node, and wherein the second pattern is associated with a second technology node;
- determining to form a multi-technology node mask (MTM) for a first mask layer of the plurality of mask layers;
- and
- preparing mask data for the MTM which includes features associated with the first pattern and features associated with the second pattern to be formed on the MTM.
A method of manufacturing a mask set, the method comprising:
- receiving a first mask data wherein the first mask data includes a first pattern associated with a first technology node;
- receiving a second mask data wherein the second mask data includes a second pattern associated with a second technology node different than the first technology node;
- and
- forming a multi-technology node mask (MTM) includes features of the first pattern and features associated with the second pattern.
Dependencies are inferred from the claim text.