Process for the collective fabrication of 3D electronic modules

Process for the fabrication of n electronic modules, n being an integer greater than 1, a module having a stack of K electronic dies, a die i, i varying from 1 to K, having at least one electronic component on an insulating substrate, the K dies being electrically connected together by conductors located on the lateral faces of the stack, fabrication is collective comprising:

• a first step having, for each die i, of:
• A1) a step of fabricating a batch of n dies i on one and the same thin plane wafer of thickness es having silicon, covered on one face with electrical connection test pads, and then with a thin electrically insulating layer of thickness ei, forming the insulating substrate and provided with at least one silicon electronic component having connection pads connected to the test pads through said insulating layer, the components being encapsulated in an insulating resin of thickness er, filling the spaces between the components, then separated from one another by first grooves with a width L1 and a depth P1 such that ei+e r<P1 <ei+er+es, the connection pads of the components being connected to tracks that are flush with the grooves;
• B1) a step of depositing an adhesive support on the component-side face;
• C1) a step of removing the silicon wafer so as to expose the test pads;
• D1) a step of electrically testing the components of the wafer via the test pads and of marking the valid components and/or defective components;
• and
• E1) a step of bonding the dies onto an adhesive film, each die comprising a valid component connected to test pads and to at least one track, insulating resin, and an insulating layer, the dies being separated by second grooves of width L2 with which the connection tracks of the valid components are flush;
• and
• a second step consisting in:
• A2) stacking and assembling the K batches obtained after the first step, so as to superpose the second grooves, substantially one ontop of another;
• B2) forming third grooves in the stacks at the second grooves, with a width L3≧L2;
• and
• C2) interconnecting the dies at the wall of the third grooves.