Integrated circuit system employing dipole multiple exposure
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsSia Kim Tan, Qunying Lin
Life of this patent
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Abstract
An integrated circuit system that includes: providing a first mask including a first feature; exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system; providing a second mask including a second feature; aligning the second mask over the image of the first mask to form an overlap region; and exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed.
Claims10
An integrated circuit system comprising:
- providing a first aperture plate including a first dipole opening and a second dipole opening oriented in a first direction;
- providing a first mask including a first feature oriented in a second direction;
- exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that possesses a geometry that is different from a structure to be formed on a substrate that includes the integrated circuit system;
- providing a second aperture plate including the first dipole opening and the second dipole opening oriented in a second direction;
- providing a second mask including a second feature oriented in a first direction, the first direction being substantially perpendicular to the second direction;
- aligning the second mask over the image of the first mask;
- and
- exposing the second mask to the radiation source to form an overlap region in the photoresist material and to define the structure on the substrate.
An integrated circuit system comprising:
- providing a first mask including a first feature;
- exposing the first mask to a radiation source to form an image of the first feature on a photoresist material that is larger than a structure to be formed, the photoresist material being formed over a substrate that includes the integrated circuit system;
- providing a second mask including a second feature;
- aligning the second mask over the image of the first mask to form an overlap region and an unoverlapped region;
- and
- exposing the second mask to the radiation source to form an image of the second feature on the photoresist material that is larger than the structure to be formed.
Dependencies are inferred from the claim text.