US 7,923,788 B2 · Semiconductor device

Abstract

A semiconductor device has a plurality of fins formed on a semiconductor substrate to be separated from each other, a first contact region which connects commonly one end side of the plurality of fins, a second contact region which connects commonly the other end side of the plurality of fins, a gate electrode arranged to be opposed to at least both side surfaces of the plurality of fins by sandwiching a gate insulating film therebetween, a source electrode including the first contact region and the plurality of fins on a side closer to the first contact region than the gate electrode, and a drain electrode including the second contact region and the plurality of fins on a side closer to the second contact than the gate electrode. The ratio Rd/Rs of a resistance Rd of each fin in the drain region to a resistance Rs of each fin in the source region is larger than 1.

Claims20

Dependent claims

A semiconductor device comprising:

a plurality of fins formed on a semiconductor substrate to be separated from each other;
a first contact region which connects commonly one end side of the plurality of fins;
a second contact region which connects commonly the other end side of the plurality of fins;
a gate electrode arranged to be opposed to at least both side surfaces of the plurality of fins by sandwiching a gate insulating film therebetween;
a source electrode including the first contact region and the plurality of fins on a side closer to the first contact region than the gate electrode;
and
a drain electrode including the second contact region and the plurality of fins on a side closer to the second contact than the gate electrode,
wherein a ratio Rd/Rs of a resistance Rd of each fin in the drain region to a resistance Rs of each fin in the source region is larger than 1.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20