Thin film transistor and method of manufacturing the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorsKi-Nyeng Kang, Chul-Kyu Kang, Jong-Hyun Choi
Life of this patent
Estimating the term…
Abstract
A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
Claims17
A thin film transistor (TFT), comprising:
- a substrate;
- a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other;
- an active layer on the substrate between the source electrode and the drain electrode;
- a cladding unit on side surfaces of the source electrode and the drain electrode, the cladding unit being spaced apart from the active layer;
- a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit;
- and
- a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
A method of manufacturing a thin film transistor, comprising:
- forming a source electrode and a drain electrode on a substrate, the source and drain electrodes being separated from each other;
- forming an active layer on the substrate between the source electrode and the drain electrode;
- forming a cladding unit on side surfaces of the source electrode and the drain electrode;
- forming a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit;
- etching a region of the gate insulating layer corresponding to the drain electrode, such that a portion of the drain electrode is exposed;
- forming a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer;
- and
- depositing metal in the etched region, the metal being a substantially same metal used to form the gate electrode.
A method of manufacturing a thin film transistor, comprising:
- forming a source electrode and a drain electrode on a substrate, the source and drain electrodes being separated from each other;
- forming an active layer on the substrate between the source electrode and the drain electrode, and forming a cladding unit on side surfaces of the source electrode and the drain electrode,
- patterning the cladding unit to be spaced apart from the active layer;
- forming a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit;
- and
- forming a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.
Dependencies are inferred from the claim text.