Method of reducing defects in PECVD TEOS films
AssigneeNovellus Systems, Inc.
InventorsN. Arul Dhas, Jon Henri
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Abstract
The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve adding a relatively small amount of helium gas to the process gas. The addition of helium significantly reduces the number of defects in the film, particularly for high deposition rate processes.
Claims19
A high deposition rate method of forming a low-defect dielectric material on a substrate comprising:
- providing a semiconductor device substrate in a deposition chamber;
- exposing the substrate to a process gas comprising TEOS, an oxidant and helium, wherein the helium flow rate is between about 2000 sccm and 4000 sccm;
- depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process, wherein the deposition rate is at least about 7000 angstroms/min.
A high deposition rate method of forming a low-defect tensile TEOS oxide film on a substrate comprising:
- providing a semiconductor device substrate in a deposition chamber;
- exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;
- wherein the TEOS flow rate is between about 15 to 20 ml/min prior to vaporization, the helium flow rate is between about 2000-4000 sccm, and the oxygen flow rate is between about 8000-12000 sccm;
- and
- depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.
A high deposition rate method of forming a low-defect compressive TEOS oxide film on a substrate comprising:
- providing a semiconductor device substrate in a deposition chamber;
- exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;
- wherein the TEOS flow rate is between about 10-15 ml/min prior to vaporization, the helium flow rate is between about 2000-4000 sccm and the oxygen flow rate is between about 8000-12000 sccm and depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.
A high deposition rate method of forming a low-defect compressive TEOS oxide film on a substrate comprising:
- providing a semiconductor device substrate in a deposition chamber;
- exposing the substrate to a process gas comprising to a process gas comprising TEOS, oxygen and helium;
- wherein the TEOS flow rate is between about 10-20 ml/min prior to vaporization, the helium flow rate is between about 1000-4000 sccm and the oxygen flow rate is between about 8000-12000 sccm and
- depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process.
A high deposition rate method of forming a low-defect dielectric material on a substrate comprising:
- providing a semiconductor device substrate in a deposition chamber;
- exposing the substrate to a process gas comprising TEOS, an oxidant and helium;
- and depositing on the substrate a dielectric film by a plasma enhanced chemical vapor deposition (PECVD) process, wherein the deposition rate is at least about 7000 angstroms/min and wherein the resulting film has fewer than about 100 defects larger than 0.1 μm per 1000 Angstroms.
Dependencies are inferred from the claim text.