Non-volatile memory device and manufacturing method thereof

A method of manufacturing a non-volatile memory device comprising the steps of:

• depositing a gate insulating layer, a buffer layer, a blocking oxide layer, and a gate electrode over a semiconductor substrate, respectively;
• etching the gate electrode, the blocking oxide layer, the buffer layer and the gate insulating layer to form a gate;
• performing an ion implant process to form source and drain regions within the semiconductor substrate;
• selectively forming a recessed pattern of the buffer layer by selectively etching the buffer layer both sides;
• depositing a charge trap material over the recessed pattern of the buffer layer, the gate, and the semiconductor substrate;
• and
• etching the charge trap material to allow the charge trap material to remain only at both sides of the buffer layer.