Method for manufacturing capacitor of semiconductor device
AssigneeDongbu HiTek Co., Ltd.
InventorTaek-Seung Yang
Life of this patent
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Abstract
A method for manufacturing a capacitor of a semiconductor device includes forming a lower metal layer over a substrate, forming a dielectric layer over the lower metal layer, forming an upper metal layer over the dielectric layer, forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer, and performing a chemical down-stream etch (CDE) process to remove a by-product of a sidewall of the upper electrode.
Claims20
A method comprising:
- forming a lower metal layer over a substrate;
- forming a dielectric layer over the lower metal layer;
- forming an upper metal layer over the dielectric layer;
- forming an upper electrode and a dielectric layer pattern by performing a reactive ion etching process with respect to the upper metal layer using the dielectric layer as an etch stop layer, and exposing a top surface of the lower metal layer;
- and
- performing a chemical down-stream etch process to remove a by-product of a sidewall of the upper electrode.
A method comprising:
- forming a lower metal layer over a substrate;
- forming a first dielectric layer over the lower metal layer;
- forming a second dielectric layer over the first dielectric layer;
- forming a third dielectric layer over the second dielectric layer;
- forming an upper metal layer over the third dielectric layer;
- forming an upper electrode and first to third dielectric layer patterns by performing a reactive ion etching process with respect to the upper metal layer using the first to third dielectric layers as an etch stop layer, and exposing a top surface of the lower metal layer;
- and
- performing a chemical down-stream etch process to remove a by-product of a sidewall of the upper electrode.
Dependencies are inferred from the claim text.