Back to results
US 7,923,307 B2Granted
Semiconductor device with fuse and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorBuem-Suck Kim
Life of this patent
Estimating the term…
Abstract
A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first mask pattern to form a portion of the polysilicon hard mask into a polysilicon fuse.
Claims10
A method for fabricating a semiconductor with a fuse, the method comprising:
- providing a substrate;
- forming an insulation layer over the substrate;
- forming a polysilicon hard mask over the insulation layer;
- forming a first mask pattern over the polysilicon hard mask;
- forming a metal contact hole by selectively etching the insulation layer using the polysilicon hard mask after the first mask pattern is formed;
- forming a metal contact by filling a conductive material into the metal contact hole;
- and
- removing the polysilicon hard mask exposed by the first mask pattern to form a portion of the polysilicon hard mask into a polysilicon fuse.
5 more elements
Dependencies are inferred from the claim text.