Method of measuring resistivity of sidewall of contact hole

A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate;

• a second electrode formed on the first electrode with an insulating film in between;
• a resist pattern formed of a photo-resist film and formed on the second electrode;
• a contact hole formed through a plasma etching with the resist pattern as a mask and penetrating through the first electrode and the second electrode;
• and an organic film deposited on the sidewall of the contact hole when the contact hole is formed, comprising the steps of:
• placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times;
• establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode;
• and
• measuring the resistivity of the organic film between the first electrode and the second electrode.