Exposure mask and pattern forming method therefor

An exposure mask comprising:

• a plurality of rectangular patterns whose scales are higher than a limit resolution of exposure light and which are repetitively aligned in a first direction and a second direction, which are perpendicular to each other, wherein the rectangular patterns are composed of semitransparent regions for applying an inverse phase to incidence light;
• a plurality of light preventive regions, each of which is aligned between two rectangular patterns adjacently lying in either the first direction or the second direction;
• and
• a plurality of transparent regions, each of which is aligned between two rectangular patterns adjacently lying in a third direction which differs from the first direction and the second direction,
• wherein a pitch between adjacent ones of said plurality of rectangular patterns in the first direction is equal to a sum of widths, in the first direction, of respective adjacent ones of said plurality of rectangular patterns and said plurality of transparent regions.

A pattern forming method for forming a pattern on a wafer by use of an exposure mask comprising:

• a plurality of rectangular patterns whose scales are higher than a limit resolution of exposure light and which are repetitively aligned in a first direction and a second direction, which are perpendicular to each other;
• a plurality of semitransparent regions, each of which is aligned between two rectangular patterns adjacently lying in either the first direction or the second direction so as to apply an inverse phase to incident light;
• and
• a plurality of light preventive regions, each of which is aligned between two rectangular patterns adjacently lying in a third direction which differs from the first direction and the second direction,
• wherein a pitch between adjacent ones of said plurality of rectangular patterns in the first direction is equal to a sum of widths, in the first direction, of respective adjacent ones of said plurality of rectangular patterns and said plurality of light preventive regions, and
• wherein the exposure mask is illuminated with linear polarization light by an oblique incident illumination.

A pattern forming method for forming a pattern on a wafer by use of an exposure mask comprising:

• a plurality of rectangular patterns whose scales are higher than a limit resolution of exposure light and which are repetitively aligned in a first direction and a second direction, which are perpendicular to each other, wherein the rectangular patterns are composed of semitransparent regions for applying an inverse phase to incidence light;
• a plurality of light preventive regions, each of which is aligned between two rectangular patterns adjacently lying in either the first direction or the second direction;
• and
• a plurality of transparent regions, each of which is aligned between two rectangular patterns adjacently lying in a third direction which differs from the first direction and the second direction,
• wherein a pitch between adjacent ones of said plurality of rectangular patterns in the first direction is equal to a sum of widths, in the first direction, of respective adjacent ones of said plurality of rectangular patterns and said plurality of transparent regions, and
• wherein the exposure mask is illuminated with linear polarization light by an oblique incident illumination.