Mask and method of manufacturing the same

A mask comprising:

• a transparent substrate;
• and
• a light-blocking layer formed on the transparent substrate, the light-blocking layer comprising:
• a source electrode pattern portion comprising a first electrode portion extending in a first direction, a second electrode portion bent from a first end of the first electrode portion and extending in a second direction substantially perpendicular to the first direction and a third electrode portion bent from a second end of the first electrode portion and extending in the second direction;
• and
• a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion and extending in the second direction, the drain electrode pattern portion and the source electrode pattern portion disposed in non-overlapping positions so as to form a spaced-apart portion between the drain pattern portion and the source electrode pattern portion,
• wherein the mask is oriented such that the first direction is substantially perpendicular to a scan direction of a light exposure apparatus,
• wherein a first width between an edge of the drain electrode pattern portion and the first electrode portion is less than at least one of a second width between an edge of the drain electrode pattern portion and an edge of the second electrode portion and a third width between an edge of the drain electrode pattern portion and an edge of the third electrode portion.

A method of manufacturing a mask comprising:

• forming a light-blocking material layer on a transparent substrate;
• patterning the light-blocking material layer to form a light-blocking layer comprising:
• a source electrode pattern portion comprising a first electrode portion extending in a first direction, a second electrode portion bent from a first end of the first electrode portion and extending in a second direction substantially perpendicular to the first direction and a third electrode portion bent from a second end of the first electrode portion and extending in the second direction;
• and
• a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion and extending in the second direction, the drain electrode pattern portion and the source electrode pattern portion disposed in non-overlapping positions so as to form a spaced-apart portion between the drain pattern portion and the source electrode pattern portion;
• forming a halftone material layer on the transparent substrate having the light-blocking layer;
• and
• patterning the halftone material layer to form a halftone layer comprising:
• a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion;
• and
• a dummy halftone portion connected to the halftone portion and more protrusive than an end of the source electrode pattern portion corresponding to the second direction.

A method of manufacturing a mask comprising:

• forming a halftone layer and a light-blocking layer on a transparent substrate;
• patterning the halftone layer and the light-blocking layer to form an electrode pattern portion;
• and
• forming through the light blocking layer a first opening pattern extending in a first direction, a second opening pattern bent from the first opening pattern and extending in a second direction substantially perpendicular to the first direction, a third opening pattern bent from the second opening pattern and extending in the first direction, a fourth opening pattern bent from the third opening pattern and extending in a third direction opposite to the second direction, and a fifth opening pattern bent from the fourth opening pattern and extending in the first direction whereby a source electrode pattern portion and a drain electrode pattern portion spaced apart from the source electrode pattern portion are defined, wherein the source electrode pattern portion and the drain electrode pattern portion are positioned in a non-overlapping manner.