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US 7,923,175 B2Granted
Photomask structure
AssigneeMacronix International Co., Ltd.
InventorsChun-Chung Huang, Chin-Cheng Yang
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Abstract
A photomask structure is described, including a substrate having multiple half-tone phase shift patterns on a device region and multiple opaque patterns on a die seal ring region. By using the photomask, a side lobe effect does not occur to the photoresist layer corresponding to the die seal ring region in the exposure step.
Claims21
A photomask structure, comprising:
- a substrate, including a device region and a die seal ring region around the device region;
- a plurality of first half-tone phase shift patterns only on the device region;
- and
- a plurality of first opaque patterns directly on the die seal ring region of the substrate.
1 more element
A photomask structure, comprising:
- a substrate;
- a plurality of half-tone phase shift patterns on the substrate;
- and
- a plurality of opaque patterns directly on the die seal region and directly on the substrate, having a width smaller than a width of the half-tone phase shift patterns and also smaller than a critical width.
1 more element
Dependencies are inferred from the claim text.