Chamber components with increased pyrometry visibility
AssigneeApplied Materials, Inc.
InventorsJoseph Yudovsky, Brendan McDougall, Ravi Jallepally, Yi-Chiau Huang, Maitreyee Mahajani, Kevin Griffin, Andrew C. Sherman
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Abstract
The present invention generally provides method and apparatus for non-contact temperature measurement in a semiconductor processing chamber. Particularly, the present invention provides methods and apparatus for non-contact temperature measurement for temperature below 500° C. One embodiment of the present invention provides an apparatus for processing semiconductor substrates. The apparatus comprises a target component comprises a material with higher emissivity than the one or more substrates.
Claims10
An apparatus for processing semiconductor substrates, comprising:
- a chamber body defining a processing volume therein;
- one or more sensors disposed outside the processing volume;
- and a target film deposited on a surface of the chamber body, wherein the target film comprises tantalum doped graphite having an emissivity in infrared spectrum at a temperature below 500° C., and the one or more sensors are configured to sense an attribute indicative of temperature of the target film.
An apparatus for processing a plurality of substrates, comprising:
- a quartz chamber body defining a processing volume therein;
- one or more heaters disposed outside the quartz chamber body and configured to heat the chamber body;
- a substrate support assembly configured to transport and support the plurality of substrates to and from the processing volume, wherein at least a portion of the substrate support assembly has a coating comprising silicon carbide which has an emissivity in infrared spectrum at a temperature below 500° C.;
- and
- a plurality of temperature sensors disposed outside the processing volume, wherein an inner and/or outer surfaces of the chamber body is coated with a layer comprising tantalum doped graphite, the plurality of temperature sensors are configured to sense an attribute indicative of temperature of one of the chamber body and the substrate support assembly.
Dependencies are inferred from the claim text.