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US 7,888,800 B2Granted
Dummy metal fill shapes for improved reliability of hybrid oxide/low-k dielectrics
AssigneeInternational Business Machines Corporation
InventorHoward S. Landis
Life of this patent
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Abstract
A semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.
Claims7
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- a plurality of dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone,
- wherein the dummy fill shapes physically connect together the first and second rigid dielectric layers and have a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layer and formed in the second non-rigid low-k dielectric layer;
- and
- at least one dummy fill shape formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect, the at least one dummy fill shape being formed of a material such that an overall CTE of the at least one dummy fill shape better matches to the second and third rigid dielectric layer than that of the second non-rigid low-k dielectric layer.
7 more elements
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- a plurality of dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layer and formed in the second non-rigid low-k dielectric layer;
- and
- at least one dummy fill shape formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect, the at least one dummy fill shape being formed of a material such that an overall CTE of the at least one dummy fill shape better matches to the second and third rigid dielectric layer than that of the second non-rigid low-k dielectric layer.
6 more elements
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- a plurality of dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (GTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone,
- wherein the dummy fill shapes physically connect together the first and second rigid dielectric layers and have a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layer and formed in the second non-rigid low-k dielectric layer;
- and
- at least one dummy fill shape formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect.
7 more elements
Dependencies are inferred from the claim text.