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US 7,888,777 B2Granted
Semiconductor device and method for manufacturing the same
AssigneeSeiko Epson Corporation
InventorYuichi Hayasaki
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a circuit region on the semiconductor substrate, a plurality of metal wires formed in the circuit region on the semiconductor device and a seal ring region surrounding the circuit region. A distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval Wmin in mutual intervals of the metal wires have a relationship of “1≦(L/Wmin)≦3”.
Claims8
A semiconductor device comprising:
- a semiconductor substrate;
- a circuit region on the semiconductor substrate;
- a plurality of metal wires formed in the circuit region on the semiconductor substrate;
- and
- a seal ring region surrounding the circuit region, wherein a distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval Wmin in mutual intervals of the metal wires have a relationship of “1≦(L/Wmin)≦3”.
2 more elements
A method for manufacturing a semiconductor device comprising:
- preparing a semiconductor substrate;
- forming a circuit region including a plurality of metal wires on the semiconductor substrate;
- and
- forming a seal ring region surrounding the circuit region, wherein a distance L between an outer periphery of the circuit region and an inner periphery of the seal ring region and a minimum interval Wmin in mutual intervals of the metal wires have a relationship of “1≦(L/Wmin)≦3”.
1 more element
Dependencies are inferred from the claim text.