Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same

A semiconductor device, comprising:

• a semiconductor substrate;
• an insulator at a top portion of the substrate, defining an insulator region;
• a conductive layer pattern on the substrate, the conductive layer pattern being patterned from a common conductive layer, the conductive layer pattern including a first pattern portion on the insulator in the insulator region and a second pattern portion on the substrate in an active region of the substrate, wherein the second pattern portion comprises a gate of a transistor in the active region;
• and
• a capacitor on the insulator in the insulator region, the capacitor including:
• a lower electrode on the first pattern portion of the conductive layer pattern, a dielectric layer pattern on the lower electrode, and an upper electrode on the dielectric layer pattern,
• wherein the upper electrode comprises a first upper electrode layer pattern on the dielectric layer pattern and a second upper electrode layer pattern on the first upper electrode layer pattern, and wherein a portion of the first upper electrode layer pattern is on the second upper electrode layer pattern.