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US 7,888,771 B1Granted
E-fuse with scalable filament link
AssigneeXilinx, Inc.
InventorsLakhbeer Singh Sidhu, Srikanth Sundararajan, Michael J. Hart
Life of this patent
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Abstract
An electronic fuse (“E-fuse”) has a silicide filament link extending along a gap between polysilicon structures formed on a silicon substrate. The silicide filament link extends across diffusions formed in the gap. A P-N junction between terminals of the E-fuse provides high resistivity after programming (fusing) the silicide filament link.
Claims20
An electronic fuse (“E-fuse”) comprising:
- a silicon substrate;
- a well of a first conductivity type formed in the silicon substrate;
- a first polysilicon structure formed over a first portion of the well;
- a second polysilicon structure formed over a second portion of the well spaced apart from the first polysilicon structure by a spacing distance so as to form a gap between the first polysilicon structure and the second polysilicon structure;
- a silicide filament link extending along the gap disposed between the first polysilicon structure and the second polysilicon structure;
- a first diffusion of a second conductivity type formed in the well;
- a second diffusion of the first conductivity type formed in the well;
- and
- a lightly doped diffusion of the second conductivity type formed in the well between the first diffusion and the second diffusion.
6 more elements
A method of fabricating an electronic fuse (“E-fuse”) comprising:
- forming a well having a first conductivity type in a silicon substrate;
- forming first polysilicon structure over a first portion of the well and a second polysilicon structure over a second portion of the well on a surface of the substrate so as to define a gap over a third portion of the well;
- forming a first sidewall spacer on a first sidewall of the first polysilicon structure and a second sidewall spacer on a second sidewall of the second polysilicon structure;
- forming a lightly doped diffusion of a second conductivity type in the well;
- forming a first diffusion of the second conductivity type in the well;
- forming a second diffusion of the first conductivity type in the well, the lightly doped diffusion being disposed between the first diffusion and the second diffusion;
- depositing a silicide forming layer on the silicon substrate;
- and
- siliciding the silicon substrate to form a silicide filament link extending along the gap between the first sidewall spacer and the second sidewall spacer.
6 more elements
An electronic fuse (E-fuse) comprising:
- a silicon substrate;
- a well of a first conductivity type formed in the silicon substrate;
- a first polysilicon structure formed over a first portion of the well;
- a second polysilicon structure formed over a second portion of the well spaced apart from the first polysilicon structure by a spacing distance so as to form a gap between the first polysilicon structure and the second polysilicon structure;
- a silicide filament link having a length extending along the gap from a first contact to a second contact, the length being transverse to the spacing distance;
- a first sidewall spacer formed on a first sidewall of the first polysilicon structure disposed between and proximate to both the silicide filament link and the first polysilicon structure along the length of the silicide filament link;
- and
- a second sidewall spacer formed on a second sidewall of the second polysilicon structure disposed between and proximate to both the silicide filament link and the second polysilicon structure along the length of the silicide filament link.
5 more elements
Dependencies are inferred from the claim text.