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US 7,888,751 B2Granted
Semiconductor device having a fin field effect transistor
AssigneeSony Corporation
InventorKen Sawada
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.
Claims19
A semiconductor device comprising
- a fin field effect transistor configured to include at least a first fin and a second fin, the first fin having a first drain region, the second fin having a second drain region connected to the first drain region;
- and
- a gate electrode provided in common for the first fin and the second fin, wherein
- threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.
1 more element
A semiconductor device comprising:
- a fin field effect transistor configured to include at least a first fin, a second pair of fins on either side of the first fin, and a third pair of fins on either side of the second pair of fins, a width of the third pair of fins being greater than a width of the second pair of fins, and the width of the second pair of fins being greater than a width of the first fin;
- and
- a gate electrode provided in common for the first fin, the second pair of fins, and the third pair of fins, wherein
- a first threshold voltage of the first fin, a second threshold voltage of the second pair of fins, and a third threshold voltage of the third pair of fins are different from each other in the fin field effect transistor.
1 more element
Dependencies are inferred from the claim text.