Semiconductor structure and method of manufacture
AssigneeHVVi Semiconductors, Inc.
InventorMichael Albert Tischler
Life of this patent
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Abstract
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.
Claims14
A semiconductor device, comprising:
- a silicon-on-insulator (SOI) substrate having a substrate layer, a buried oxide (BOX) layer, and an active layer, wherein the buried oxide layer is at least partially disposed between the substrate layer and the active layer;
- and
- a dielectric region adjacent the active layer, wherein the dielectric region comprises a portion of the buried oxide layer, wherein at least a portion of the dielectric region extends from a surface of the active layer to a depth of at least about three microns or greater below the surface of the active layer;
- wherein the dielectric region has one or more voids formed therein and wherein the dielectric region and the one or more voids at least partially surround at least a portion of the active layer, the at least partially surrounded portion of the active layer being external to the dielectric region.
Dependencies are inferred from the claim text.