Deep trench capacitor in a SOI substrate having a laterally protruding buried strap

A deep trench capacitor comprising:

• a node dielectric located on a sidewall of a deep trench located in a semiconductor-on insulator (SOI) substrate;
• an inner electrode abutting an inner wall of said node dielectric;
• a buried plate comprising a doped semiconductor material and abutting a bottom surface of a buried insulator layer of the SOI substrate and an outer wall of said node dielectric;
• a buried strap abutting said inner electrode and a top semiconductor layer of the SOI substrate, said buried strap having an upper buried strap sidewall that is laterally offset from a lower buried strap sidewall and said outer wall of said node dielectric by a lateral offset;
• and
• an STI structure vertically abutting a top surface of said buried insulator layer.

A deep trench capacitor comprising:

• a node dielectric located on a sidewall of a deep trench located in a semiconductor-on-insulator (SOI) substrate;
• an inner electrode abutting an inner wall of said node dielectric;
• a buried plate comprising a doped semiconductor material and abutting a bottom surface of a buried insulator layer of the SOI substrate and an outer wall of said node dielectric;
• and
• a buried strap abutting said inner electrode and a top semiconductor layer of the SOI substrate, said buried strap having an upper buried strap sidewall that overlies a topmost surface of said buried insulator layer and is laterally offset from a lower buried strap sidewall and said outer wall of said node dielectric by a lateral offset, and wherein said lower buried strap sidewall is vertically coincident with said outer wall of said node dielectric.