Device for detecting stress migration properties

A device for detecting stress migration properties of a semiconductor module finally mounted in a product-relevant housing, the device comprising:

• a stress migration test structure formed in the semiconductor module to detect the stress migration properties;
• and
• an integrated heating device formed in the semiconductor module, the integrated heating device being formed within or in direct proximity to the stress migration test structure in the semiconductor module to locally heat the stress migration test structure;
• wherein the stress migration test structure comprises a first interconnect region in a first interconnect layer, a second interconnect region in a second interconnect layer, and a connecting region electrically connecting the interconnect regions through a first insulating layer formed between the interconnect layers;
• wherein the integrated heating device comprises a heating interconnect region through which a heating current flows, the heating interconnect region being outside the first or second interconnect region or connecting region, the heating interconnect region being formed in the first interconnect layer, the second interconnect layer or an interconnect layer adjoining the first or second interconnect region.