Forming floating body RAM using bulk silicon substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKa-Hing Fung, Carlos H. Diaz
Life of this patent
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Abstract
A method for forming a semiconductor device is provided. The method comprises providing a semiconductor structure comprising a semiconductor substrate and a dielectric layer on the semiconductor substrate, wherein the dielectric layer has an opening through which the semiconductor substrate is exposed; forming a semiconductor strip on the dielectric layer and adjacent the opening, wherein the semiconductor strip is electrically isolated from the semiconductor substrate; forming a gate dielectric over a portion of the semiconductor strip that is over the dielectric layer; forming a gate electrode over the gate dielectric; and forming a source/drain region in the semiconductor strip.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a semiconductor structure comprising a semiconductor substrate and a dielectric layer on the semiconductor substrate, wherein the dielectric layer has an opening through which the semiconductor substrate is exposed;
- forming a semiconductor strip on the dielectric layer and adjacent the opening, wherein the semiconductor strip is electrically isolated from the semiconductor substrate;
- forming a gate dielectric over a portion of the semiconductor strip that is over the dielectric layer;
- forming a gate electrode over the gate dielectric;
- and
- forming a source/drain region in the semiconductor strip.
A method of forming a semiconductor structure, the method comprising:
- providing a semiconductor substrate;
- forming a dielectric layer on the semiconductor substrate;
- forming a slit in the dielectric layer, wherein the semiconductor substrate is exposed through the slit;
- epitaxially growing a semiconductor material on the semiconductor substrate through the slit to form an epitaxial region, wherein the epitaxial region comprises a portion extended on the dielectric layer;
- removing a portion of the epitaxial region over the slit to form a semiconductor strip;
- forming a gate dielectric over a top surface and sidewalls of the semiconductor strip, wherein the gate dielectric layer extends across the slit;
- forming a gate electrode over the gate dielectric;
- and
- performing an implantation to form a source/drain region in the semiconductor strip.
Dependencies are inferred from the claim text.