Switching device for a pixel electrode and methods for fabricating the same
AssigneeAu Optronics Corporation
InventorsKuo-Lung Fang, Wen-Ching Tsai, Yeong-Shyang Lee, Han-Tu Lin
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Abstract
The invention discloses a switching element of a pixel electrode for a display device and methods for fabricating the same. A gate is formed on a substrate. A first copper silicide layer is formed on the gate. An insulating layer is formed on the first copper silicide layer. A semiconductor layer is formed on the insulating layer. A source and a drain are formed on the semiconductor layer. Moreover, a second copper silicide layer is sandwiched between the semiconductor layer and the source/drain.
Claims14
A method of fabricating a switching element of a pixel electrode for a display device, comprising:
- forming a gate, comprising Cu or Cu alloy, on a substrate;
- forming a first CuSix layer on the gate;
- forming an insulating layer on the first CuSix layer;
- forming a semiconductor layer on the insulating layer;
- and
- forming a source and a drain on the semiconductor layer.
Dependencies are inferred from the claim text.