Exposure mask, its manufacture method, pattern transfer method, pattern forming method, and SRAM manufacture method
AssigneeFujitsu Semiconductor Limited
InventorFumitoshi Sugimoto
Life of this patent
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Abstract
A mask formed with a mask pattern is prepared, the mask pattern having a shape that a base pattern is divided into at least two partial patterns disposed at a space narrower than a resolution limit. A first relation is acquired between a width of the space separating the partial patterns and a size of a pattern on a substrate formed by transferring the mask pattern. The width of the space separating the partial patterns is determined in accordance with the size of a pattern to be formed on the substrate and the first relation. A mask pattern is formed having at least two separated partial patterns on a mask in accordance with the determined width of the space.
Claims16
A manufacture method for an exposure mask, comprising:
- (a) forming a mask pattern having a shape that a base pattern is divided into at least two partial patterns disposed at a space narrower than a resolution limit, and acquiring a first relation between a width of the space separating the partial patterns and a size of a pattern on a substrate formed by transferring the mask pattern;
- (b) determining the width of the space separating the partial patterns in accordance with the size of a pattern to be formed on the substrate and the first relation;
- and
- (c) forming a mask pattern having at least two separated partial patterns on a mask in accordance with the width of the space determined at the step (b).
An exposure mask comprising:
- a mask substrate;
- and
- a mask pattern formed on the mask substrate,
- wherein the mask pattern includes at least two partial patterns corresponding to a pattern to be transferred to a substrate and separated from each other at a space narrower than a resolution limit.
A pattern transfer method comprising:
- (a) exposing a photosensitive film through an exposure mask having a mask pattern of a shape that a base pattern is divided in a first direction into at least two partial patterns disposed at a space narrower than a resolution limit;
- and
- (b) and developing the exposed photosensitive film to form a first pattern to which the mask pattern is transferred,
- wherein a size in the first direction of the first pattern is smaller than a size in the first direction of a second pattern formed by transferring the base pattern under a same exposure condition as a condition of the step (a).
An exposure mask comprising:
- a mask substrate;
- and
- a mask pattern including therein an auxiliary pattern and formed on the mask substrate,
- wherein a light transmission rate of an area inside the mask pattern and outside the auxiliary pattern is lower or higher than both a light transmission rate of an area inside the auxiliary pattern and a light transmission rate of an area outside the mask pattern, an outer shape of the mask pattern is a polygon having the number of apexes smaller than the number of apexes of the auxiliary pattern, and a size of the auxiliary pattern is smaller than a resolution limit.
A pattern transfer method comprising:
- exposing a photosensitive film through a mask pattern including therein an auxiliary pattern, wherein a light transmission rate of an area inside the mask pattern and outside the auxiliary pattern is lower or higher than both a light transmission rate of an area inside the auxiliary pattern and a light transmission rate of an area outside the mask pattern, an outer shape of the mask pattern is a polygon having the number of apexes smaller than the number of apexes of the auxiliary pattern, and a size of the auxiliary pattern is smaller than a resolution limit;
- and
- developing the exposed photosensitive film.
A pattern forming method comprising:
- exposing a photosensitive film on a semiconductor wafer through a mask pattern having an opening whose width is not wider than a width of a design rule, an area inside the opening being a light shielding area;
- and
- developing the exposed photosensitive film to form a pattern on the semiconductor wafer.
A manufacture method for an SRAM comprising:
- exposing a photosensitive film on a semiconductor wafer through a mask pattern having an opening whose width is not wider than a width of a design rule, an area inside the opening being a light shielding area;
- developing the exposed photosensitive film to form a pattern on the semiconductor wafer;
- and
- by using the pattern as a mask, processing a surface layer of the semiconductor wafer.
Dependencies are inferred from the claim text.