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US 7,887,884 B2Granted
Method for atomic layer deposition of materials using an atmospheric pressure for semiconductor devices
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorFumitake Mieno
Life of this patent
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Abstract
A method for atomic layer deposition. The method includes providing a substrate having a surface region and exposing the surface region of the substrate to an atmospheric pressure. The method also maintains at least the substrate at about the atmospheric pressure and forms a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure. Preferably, the film is grown at a rate of greater than about 1 nanometer per minute.
Claims23
A method for atomic layer deposition, the method comprising:
- placing a plurality of substrates into a cassette;
- removing one of the substrates;
- applying the one substrate on a moving member, the moving member being coupled to a plurality of gas distribution members numbered from 1 through N, where N is an integer;
- moving the substrate via the moving member to expose a surface of the substrate to one or more of the gas distribution members in a serial manner from the first gas distribution member to the Nth gas distribution member;
- and
- forming an atomic layer film overlying the surface as the surface moves on the moving member and is facing one or more of the plurality of gas distribution members,
- wherein the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than 1, each of the groups including a set of gas distribution members arranged in a same serial configuration numbered from 1 through N, and the substrate is moved from the first group to the Mth group via the moving member in a serial manner and in a first direction,
- wherein each of the plurality of groups comprises at least a reactant gas distribution member and an inert gas distribution member, and
- wherein the moving member comprises a silicon carbide coated carbon material.
6 more elements
A method for atomic layer deposition under atmospheric conditions, the method comprising:
- placing a plurality of substrates into a cassette;
- removing one of the substrates;
- applying the one substrate on a moving member, the moving member being coupled to a plurality of gas distribution members, the plurality of gas distribution members being numbered from 1 through N, where N is an integer;
- moving the substrate via the moving member to expose a surface of the substrate to one or more for the gas distribution members in an serial manner from the first gas distribution member to the Nth gas distribution member;
- maintaining the substrate at about an atmospheric pressure;
- and
- forming an atomic layer film overlying the surface as the surface moves on the moving member while being maintained at atmospheric pressure;
- wherein the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than 1, each of the groups including a same set of the gas distribution members arranged in a same serial configuration, and the substrate is moved from the first group to the Mth group via the moving member in a serial manner and in a first direction,
- wherein each of the plurality of groups comprises at least a reactant gas distribution member and an inert gas distribution member, and
- wherein the moving member comprises a silicon carbide coated carbon material.
7 more elements
A method for atomic layer deposition, the method comprising:
- providing a substrate having a surface region;
- exposing the surface region of the substrate to an atmospheric pressure;
- maintaining the substrate at about the atmospheric pressure;
- and
- forming a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure to enhance a deposition rate of the film to more than 1 nanometers per minute,
- wherein the atomic layer deposition is provided by applying the substrate on a moving member, the substrate being exposed to a plurality of gas distribution members, the plurality of gas distribution members being arranged in a serial manner numbered from 1 through N, where N is an integer, the plurality of gas distribution members are provided in a plurality of groups numbered 1 through M, M being an integer greater than one, each of the groups includes a same set of gas distribution members arranged in a same serial manner, and the substrate is moved from the first group to the Mth group in a first direction via the moving member in a serial manner,
- wherein each group comprises an argon distribution member, a Me3Al (TMA) a distribution member, and another argon distribution member.
4 more elements
Dependencies are inferred from the claim text.