Gasification monitor, method for detecting mist, film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorTeruo Iwata
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AssigneeTokyo Electron Limited
InventorTeruo Iwata
Estimating the term…
A deposition apparatus supplies a reactive gas obtained by vaporizing a liquid material at a vaporizer 30 into a chamber 10 via a processing-gas pipe 40 and forms a thin film on a semiconductor wafer W due to a thermal decomposition of the reactive gas. The deposition apparatus is provided, in the processing-gas pipe 40, with a crystal gauge 51 detecting a pressure Pq under the influence of mist in the reactive gas and a capacitance manometer 52 detecting a pressure Pg under no influence of the mist. The apparatus further includes a gasification monitor 50 detecting a quantity of mist in the reactive gas on the basis of a difference ΔP between the pressure Pq and the pressure Pg measured by the crystal gauge 51 and the capacitance manometer 52 in order to prevent deposition defects due to the mist in the reactive gas.
A film forming method for forming a thin film on an object to be processed by thermally decomposing a processing gas obtained by vaporizing a liquid material or a solid material, the film forming method comprising the steps of:
A film forming method for forming a thin film on an object to be processed by thermally decomposing a processing gas obtained by vaporizing a liquid material or a solid material, the film forming method comprising the steps of:
Dependencies are inferred from the claim text.