Polymer transistor
AssigneeCambridge Enterprise Limited
InventorsLay-Lay Chua, Peter Kian-Hoon Ho, Henning Sirringhaus, Richard Henry Friend
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Abstract
A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.
Claims28
A transistor, comprising:
- a semiconductive layer;
- and
- a gate dielectric layer comprising an insulating polymer,
- wherein, the insulating polymer forms an interface with the semiconductive layer;
- the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups, and
- wherein the semiconductive layer comprises an organic semiconductor.
Use in a transistor, comprising a semiconductor layer and a gate dielectric layer forming an interface with the semiconductor layer, of (1) a crosslinked polymer comprising one or more units having a low cohesive-energy-density and one or more crosslinking groups and substantially not including any residual —OH leaving groups, as a gate dielectric for the gate dielectric layer forming an interface with the semiconductor layer, and (2) an organic semiconductor as the semiconductor layer.
Dependencies are inferred from the claim text.