Shallow trench isolation dummy pattern and layout method using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKelvin Yih-Yuh Doong, Chin-Chiu Hsia
Life of this patent
Estimating the term…
Abstract
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.
Claims20
A computer-implemented layout method for shallow trench isolation for use in a computer, wherein the computer is programmed to perform the steps of:
- extracting destined first layout objects by the computer;
- defining first forbidden areas surrounding the extracted destined layout objects by the computer;
- forming a first dummy pattern in a first area beyond the destined layout objects and the first forbidden areas by the computer, wherein the first dummy pattern comprises a plurality of first dummy cell patterns, each first dummy cell pattern comprising:
- a dummy active area and a shallow trench isolation area bounded by a circumference;
- an active area pattern completely overlapping the dummy active area;
- and
- a first polysilicon pattern formed in the shallow trench isolation area, outside the active area pattern;
- defining second forbidden areas comprising the first dummy pattern, the destined layout objects, and the first forbidden areas by the computer;
- forming a second dummy pattern in a second area beyond the second forbidden areas by the computer;
- and
- creating second layout objects by attaching the first dummy pattern and the second dummy pattern to the destined first layout objects by the computer.
A computer-implemented layout method for shallow trench isolation for use in a computer, wherein the computer is programmed to perform the steps of:
- extracting destined first layout objects by the computer;
- defining forbidden areas surrounding the extracted destined layout objects by the computer;
- forming a dummy pattern in a first area beyond the destined layout objects and the first forbidden areas by the computer, wherein the dummy pattern comprises a plurality of dummy cell patterns, each dummy cell pattern comprising:
- an dummy active area and a shallow trench isolation area bounded by a circumference;
- an active area pattern completely overlapping the dummy active area;
- and
- a first polysilicon pattern formed in the shallow trench isolation area, outside the active area pattern;
- and
- creating second layout objects by attaching the dummy pattern to the destined first layout objects by the computer.
Dependencies are inferred from the claim text.