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US 7,843,070 B2Granted
Nanotube and metal composite interconnects
AssigneeIntel Corporation
InventorKevin P. O'Brien
Life of this patent
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Abstract
Nanotube and metal composite interconnects are generally described. In one example, an apparatus includes an interlayer dielectric (ILD) and one or more interconnect structures coupled to the ILD, the one or more interconnect structures including a composite of metal and one or more nanotubes.
Claims6
An apparatus, comprising:
- a microelectronic device comprising one or more transistors;
- at least one electrical component associated with the microelectronic device;
- an interlayer dielectric (ILD) disposed between the microelectronic device and the at least one electronic component associated with the microelectronic device;
- and
- one or more interconnect structures coupled to the ILD, at least one interconnect structure comprising a composite of metal and at least one nanotube, the at least one interconnect structure electrically coupling the microelectronic device to the electronic component associated with the microelectronic device.
2 more elements
Dependencies are inferred from the claim text.